Nara Yasuo | Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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• Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japanの論文著者

Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan | 論文

• Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing

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