Khan M. | Department of Electrical Engineering, University of South Carolina
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概要
Department of Electrical Engineering, University of South Carolina | 論文
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- Room-Temperature Stimulated Emission from AlN at 214nm
- Planar Schottky Diodes on High Quality A-plane GaN
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire