Nakamura Jun | Department of Electronic-Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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- Department of Electronic-Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japanの論文著者
Department of Electronic-Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan | 論文
- Dielectric Properties of the Interface between Si and SiO2
- Mechanism of Velocity Saturation of Atomic Friction Force and Dynamic Superlubricity at Torsional Resonance