Inoue Satoshi | Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan
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- Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japanの論文著者
Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan | 論文
- Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
- Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy