Okada Hiroshi | Department of Electronics and Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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- Department of Electronics and Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japanの論文著者
Department of Electronics and Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan | 論文
- Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
- Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer