Kim Jae-Hyun | 論文著者

Advanced Technology Development Team, Semiconductor R&D Centre, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea

Advanced Technology Development Team, Semiconductor R&D Centre, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea

Department of Electronics Engineering, Ajou University

Department Of Physics Korea Advanced Institute Of Science And Technology

Department of Physics, Korea Advanced Institute of Science and Technology

Graduate School of EEWS, KAIST

Graduate School of EEWS, KAIST, Daejeon 305-701, Korea

Korea Institute of Machinery and Materials

Nano Applied Energy Device Laboratory, Daegu-Gyeongbuk Institute of Science and Technology, Daegu 704-230, Korea

School of Electrical & Computer Engineering AJOU University

School Of Electrical And Computer Engineering Ajou University

School of Electrical and Computer Engineering, Ajou University