HIROSHIMA Hiroshi | 論文著者

Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)

Advanced Semiconductor Research Center, AIST, 1-1 Umezono 1-chome, Tsukuba, Ibaraki 305-8501, Japan

Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Advanced Semiconductor Research Center; AIST

Advanced Semiconductor Research Center; National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2

Electrotechnical Laboratory

Electrotechnical Laboratory Ministry Of International Trade And Industry

Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan

Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba–shi, Ibaraki 305, Japan

Electrotechnical Laboratory, Ministry of International Trade and Industry

Japan Science and Technology Agency (JST), Core Research Evolutional Science and Technology (CREST), Chiyoda, Tokyo 102-0075, Japan

Japan Science and Technology Agency, CREST (Core Research of Evolutional Science & Technology)

JST, CREST

JST-CREST

MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

MIRAI, Advanced Semiconductor Research Center (ASRC)

MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie

MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)