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HAN Xiu-Feng | 論文著者
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Han Xiu-feng
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Han Xiu-feng
Department Of Applied Physics Graduate School Of Engineering Tohoku University Sendai Japan
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HAN Xiu-Feng
Department of Applied Physics, Graduate school of Engineering, Tohoku University
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Han Xiu-Feng
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 08, Sendai 980-8579, Japan
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Han Xiu-Feng
Department of Applied Physics, Graduate school of Engineering, Tohoku University, Sendai 980-8579, Japan
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Han Xiu-Feng
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai, Japan
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HAN Xiu-Feng
Department ofApplied Physics, Graduate School of Engineering, Tohoku University
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Han Xiu-feng
Institute Of Semiconductors Chinese Academy Of Sciences
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Han Xiu-Feng
Institute of Semiconductors, Chinese Academy of Sciences
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HAN XIU-FENG
Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences|State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences