FUJITA Ken | 論文著者

Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

Department of Applied Physics, Faculty of Engineering, The University of Tokyo

Department Of Chemistry Faculty Of Science Science University Of Tokyo

Department Of Chemistry Graduate School Of Science Science University Of Tokyo

Department of Chemistry, Faculty of Science, Science University of Tokyo

Department of Chemistry, Graduate School of Science, Science University of Tokyo

Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University

Faculty of Integrated Human Studies and Graduate School of Human and Environmental Studies Kyoto University

Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)

Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT–ATP), c/o National Institute for Advanced Interdisciplinary Research (NAIR), 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan

o National Institute for Advanced Interdisciplinary Research (NAIR)

Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

Research Center for Advanced Science and Technology, The University of Tokyo

The Authors Are With The Opto-electronics Laboratories Oki Electric Industry Co.ltd.

The authors are with the Opto-Electronics Laboratories, Oki Electric Industry Co.Ltd.

ULSI R & D Center, Oki Electric Industry Co., Ltd.,

VLSI R & D Center, Oki Electric Industry Co., Ltd., 550–1, Higashiasakawa, Hachioji, Tokyo 193

Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

VLSI Research and Development Center, Oki Electric Industry Co., Ltd.

VLSI Research and Development Center, Oki Electric Industry Co., Ltd., 550–1 Higashi–Asakawa, Hachioji, Tokyo 193, Japan