Cho Hag–Ju | 論文著者

SAMSUNG Electronics Co., Semiconductor R Center, Memory Process Development Team 2, San #24, Nongseo–lee Kiheung–eup, Yongin–gun, Kyungki–do, 449–900, Korea

Semiconductor R Center, SAMSUNG Electronics Co., San #24, Nongseo–lee, Kiheung–eup, Yongin–si, Kyungki–do, 449–900, Korea

Semiconductor R Center, SAMSUNG Electronics Co., San #24, Nongseo–Ri, Kiheung–Eup, Yongin–Si, Kyungki–Do, 449–900 Korea

Semiconductor R Center, SAMSUNG Electronics Co., Yongin–Si, Kyungki–Do 449–900, Korea

Semiconductor R&D center, Samsung electronics Co., Ltd., San #24 Nongseo–lee, Kiheung–eup, Yongin–gun, Kyungki–do 449–900, Korea