Fabrication of field-effect transistor devices with fullerodendron by solution process

概要

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n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO_2 / Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μof the fullerodendron FET reaches 1.7×10^<-3> cm^2 V^<-1> s^<-1> at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.
AMERICAN INSTITUTE OF PHYSICSの論文