Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
The authors report the self-assembly of hexagonal MnAs nanoclusters on GaInAs (111)B surfaces by metal-organic vapor phase epitaxy. The ferromagnetic behavior of the nanoclusters dominates the magnetic response of the samples when magnetic fields are applied in a direction parallel to the wafer plane. For the magnetic fields applied in a direction perpendicular to the plane, diamagnetic characteristics are dominant. The results indicate that the c axis of the nanoclusters is perpendicular to the plane, and that their a axis is in plane. They are consistent with the results of crystallographic analysis, where the nanoclusters' c axis is shown to be along a GaInAs [–1–1–1] direction.
- American Institute of Physicsの論文
American Institute of Physics | 論文
- Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions
- Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing
- Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier
- Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering