Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy

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We have investigated electrical properties and deep levels of n-GaP1－xNx (x=0%－0.62%) grown on (100) n-GaP substrates by gas source molecular beam epitaxy. The x-ray photoelectron spectroscopy results showed no significant effects on the chemical bonding status of the host Ga-P matrix by the incorporation of small amounts of N atoms. In the Raman spectra, the zone-edge GaP-like vibration was observed at 387 cm－1, originating from alloy disorder or local distortion of the GaP1－xNx lattice. The electrical properties of the GaP1－xNx surfaces were characterized using a Schottky contact structure. An ideality factor of 1.10–1.15 and a Schottky barrier height of 1.1 eV were obtained from the current-voltage characteristics of Ni/GaP1－xNx diodes, indicating good interface quality. The thermal admittance spectroscopy clearly detected the Si donor level with an activation energy of 84±4 meV in GaP and GaP1－xNx. For the GaP1－xNx samples, we observed deep levels probably associated with N-induced defects such as N-N pairs, N clusters, and an N-containing complexes. ©2007 American Institute of Physics
American Institute of Physicsの論文
2007-05-15