Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy

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The authors present the formation of Fabry-Pérot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Pérot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAs nanowires were also observed. ©2007 American Institute of Physics
American Institute of Physicsの論文
2007-09-24