Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution
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概要
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A new method of fabricating porous silicon emitting in the ultraviolet (UV) spectral region ispresented. This method uses photoetching in an aqueous salt (KF) solution. Strong UVphotoluminescence is observed at ～3.3 eV with a full width at a half maximum of ～0.1 eV, whichis much narrower than those reported previously. Fourier transform infrared spectroscopy suggeststhat the surface oxide produced during photoetching plays an important role in the UV emission ofthe KF-prepared PSi.
- 2005-12-19
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