Visualization of photoexcited free carriers by scanning near-field millimeter-wave microscopy

概要

論文の詳細を見る
Visualization of transition phenomena of photoexcited free carriers by scanning near-field millimeter-wave microscopy has been demonstrated. A scanning millimeter-wave microscope using a metal slit-type probe and an image reconstruction algorithm based on computerized tomographic imaging has been used in the experiment to achieve two-dimensional time-resolved imaging. Experiments performed at 60 GHz (λ = 5mm) under room temperature conditions show that generation, extinction, and diffusion processes of photoexcited free carriers generated in the silicon layer of a silicon on quartz substrate can be imaged with a time division of one nanosecond and a spatial resolution of 110 μm ( ? λ/45).
American Institute of Physicsの論文
2000-07-03