High Diffuse Reflectivity of Nanoporous GaN Distributed Bragg Reflector Formed by Electrochemical Etching

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概要

• 論文の詳細を見る

• A GaN distributed Bragg reflector (DBR) based on nanoporous GaN was fabricated by doping selective electrochemical etching. Twenty-one pairs of undoped-GaN/n-GaN were grown and only n-GaN was converted into a nanoporous layer during the etching. From spectral reflectance measurement, clear stopbands were observed, but the maximum reflectivity was limited to 87% at {\sim}450 nm in specular reflection geometry. It was attributed to significant scattering in the DBR caused by the non-uniform formation of nanopores. However, the diffuse reflectivity of nanoporous DBR was much higher ({\sim}100%), which could be advantageous for a diffuse reflection mirror in a light-emitting diode.

• 2013-07-25

著者

• Kang Jin-ho

  Department Of Cardiology Kangbuk Samsung Hospital Sungkyunkwan University School Of Medicine

• Ryu Sang-Wan

  Department of Physics and Institute of Optoelectronics, Chonnam National University, Gwangju 500-757, South Korea

• Park Joonmo

  Department of Physics, Chonnam National University, Gwangju 500-757, Korea

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