退院支援の基本的考え方とそのポイント (特集 よりよい在宅生活に向けた退院支援)
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概要
論文 | ランダム
- Annealing effects on Ge/SiO2 interface structure in wafer-bonded germanium-on-insulator substrates (Special issue: Solid state devices and materials)
- Native oxidation growth on Ge(111) and (100) surfaces (Special issue: Solid state devices and materials)
- Improvement in the property of field effect transistor having the HfO2/Ge structure fabricated by photoassisted metal organic chemical vapor deposition with fluorine treatment (Special issue: Solid state devices and materials)
- Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of Al (Special issue: Solid state devices and materials)
- Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O (Special issue: Solid state devices and materials)