Hot electron Hall mobility in nonpolar semiconductors
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概要
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The electron distribution function for nonpolar nondegenerate semiconductorsis investigated analytically from warm electron range up to hot electronrange when a weak magnetic field is applied. Taking account of the effectsof the acoustical and optical mode scatterings for the simple model of thesemiconductor in which the constant energy surfaces are assumed to bespherical, the Boltzmann equation is solved in the temperature range between77 and 300 K. The distribution is assumed to be expressed by the product ofthe Maxwell-Boltzmann distribution and an unknown function, and the unknownfunction is calculated to be an analytical form. The hot electron Hallmobility as functions of fields is calculated from the distribution function, andits results are qualitative agreement with the experimental data obtained byNag et al for n-Ge in strong field range.
- 福井大学工学部の論文
福井大学工学部 | 論文
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