飽和領域におけるトランジスタのターン・オフ特性

概要

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Power transistor are useful as switching element to digital system. In thiscase，there are following three mode in switching operation of the transistor.In mode 1 (collector current cut-off) the charge densisty is very nearly zero atboth emitter and collector.In mode 2 (active) the charge density is positive atthe emitter and very nearly zero at the collector. In mode 3 (collector currentsaturation) the charge density is very high through out the base layer inc1udingin the vicinity of the collector junction，which is forward biased and is thereforea very low impedance. In mode 3，If the transistor is driven suffciently hardto cause the operating point to enter the current saturation region and is app1iedlarge reverse base-current， the phenomenon such as over-shoot of collectorcurrent occur at the turn off time.In this paper，we deal with nonregenerative switching circuit which are usedvery frequent1y in the digital system. In the transient response which overshootof collector current at the turn off time occurs， the stored base-spacecharges change with time，then the space distribution of the base-charge densityholds to ap art of sine curve. From this analysis，if external circuit parametersare set optimum values，m inimum values of the rate of increase for collectorcurrent was obtained experimentaly.
福井大学工学部の論文