ロドプシンの構造・機能における特殊性と一般性 (第5土曜特集 最新 G蛋白質共役受容体研究--疾患解明とシグナル制御の新時代) -- (受容体の解析・制御のあらたな視点)
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- 2010-05-29
論文 | ランダム
- Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2
- Properties of GaP(001) surfaces chemically treated in NH4OH solution
- Ultraviolet emission from porous silicon photosynthesized in aqueous alkali fluoride solutions
- Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution
- Structural and photoluminescence properties of porous GaP formed by electrochemical etching