High-Efficiency AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using a Sub-Micron Deep-UV T-Shaped Gate Technology (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)

スポンサーリンク

概要

Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo | 論文

もっと見る

スポンサーリンク