InNの有機金属気相(MOCVD)成長

概要

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Epitaxial growth of InN， as a key technology for device application of InN， has beell studied using the metalorganic chemical vapor deposit.ion (MOCVD) technique and Si andα-Al₂O₃ as substrates. It is found that the use of N₂ carrier gas provides an InN growth condition with a relieved shortage of active nitrogen， compared with the use of H₂ carrer gas. The surface nitridation of both the substrates is found to have important effects on the crystalline quality of grown InN films. Surface allalysis with RHEED and XPS have revealed that silcon nitride of amorphous phase is forrned before and during the growth on a Si(1l1) substrate surface at a relatively low temperature (～500 ℃). This is the major cause for poorly-oriented or polycrystalline InN film growth on Si substrates. Nitridation of α-A1₂O₃(0001) surface is found to occur at a temperature higher than 800 ℃. The nitridation brings about a remarkable improvement of heteroepitaxial InN film quality， because an AIN is formed on α-Al₂O₃ surface and the lattice mismatch is reduced from 25% for InN/α-Al₂O₃ to 13% for InN/AIN.
福井大学工学部の論文