ハイレ-トスパッタリング装置の製作
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概要
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Usual sputtering methods have a weakpoint that sputtering current is a little and a sticking velocityis low during the deposition process. We have been troubled by low germanium sticking coefficientin producting a Nb_3Ge thin film. Therefore, in order to make it higher, we manufactured the highrate sputtering apparatus wherein a magnetic field is perpendicular to an electric field in contradictionto a parallel electric field in the former. Utilizing this apparatus, we could increase the sputtering currentby nearly 2-3×10 times. As a result, germanium sticking coefficicnt was made higher to obtain a stoichi-ometeic Nb_3Ge and also this method was clarified to be very useful in shortening the sputtering time.
- 鹿児島大学,カゴシマ ダイガク,Kagoshima Universityの論文
鹿児島大学,カゴシマ ダイガク,Kagoshima University | 論文
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