CO密度が示す棒状渦巻き銀河像 (どんな形? 私たちの銀河<特集>)
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概要
論文 | ランダム
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
- Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
- Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
- The Exchange-Coupled Field in NiO/Ni Double Layer on Silica Substrates