1M22 炭化珪素薄膜昇華分解によるカーボンナノチューブ配向膜の作製
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概要
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SiC film was grown on C substrate by chemical vapor deposition (CVD) with altemating gas supply. Source gases were SiH_2Cl_2 and C_2H_2,and the carrier gas was H_2. The growth of the SiC film was performed at 1073 K. Finally, the SiC film on C substrate was heated at 1973 K for 0.5 h in 1X(10)^<-2> Pa.
- 2001-09-26
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