2C39 塗布熱分解法によるエピタキシャル La_<1-x>Sr_xMnO_3 膜の作製
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概要
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La_<1-x>Sr_xMnO_3(LSMO)(x=0-0.3) films were prepared on various substrates by dipping-pyrolysis process using metal naphthenates as starting materials. Epitaxially grown LSMO films were prepared on SrTiO_3(001) at 800-1200℃. These LSMO (x=0.1-0.3) films showed metallic conducting behavior at 30-300K. On the other hand, alignment of LSMO films on MgO(001) were much weaker than that on SrTiO_3 and needed higher annealing temperature around 1600℃ to obtain oriented films. In-plane alignment of these films was found to consist of epitaxially grown grains and 45°-rotated grains.
- 1996-04-02
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