Effect of PbO excess on the microstructure, dielectric and piezoelectric properties, and energy-storage performance of Bi(Ni

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概要

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• Ferroelectric Bi(Ni<inf>1/2</inf>Ti<inf>1/2</inf>)O<inf>3</inf>–PbTiO<inf>3</inf>(BNT–PT) thin films near the morphotropic phase boundary (MPB) with different amount of excess lead (0, 10, and 20%) were successfully deposited onto Pt(111)/Ti/SiO<inf>2</inf>/Si substrates via a chemical solution approach. The effects of excess lead on the microstructure, dielectric and piezoelectric properties, and energy-storage performance of the thin films were investigated in detail. X-ray diffraction results revealed that the films showed an increasing (100)-orientation with an increasing amount of excess lead. Dielectric, ferroelectric, and current–voltage measurements showed that the films with more excess lead exhibited an enhanced dielectric constant and greater back-switch behavior, while the smaller leakage current density. As a result, the energy-storage density was also markedly improved from 22.8 to 50.2 J/cm³under an electric field of 2250 kV/cm. The effective piezoelectric constant d<inf>33</inf>increased from 41.5 to 70.1 pm/V with increasing excess lead from 0 to 20%.

• Institute of Physicsの論文
• 2014-07-24

著者

• Xie Zhenkun

  State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.

関連論文

• Effect of PbO excess on the microstructure, dielectric and piezoelectric properties, and energy-storage performance of Bi(Ni

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