Compact Slow-Light Electro-Absorption Modulator Laterally Integrated with 980 nm Vertical-Cavity Surface-Emitting Laser
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概要
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We demonstrate a compact slow-light electro-absorption modulator laterally integrated with a single-mode 980 nm vertical-cavity surface-emitting laser (VCSEL). Lateral optical coupling from a VCSEL to a slow-light modulator based on a Bragg reflector waveguide was realized and the electrical isolation between these devices was achieved by ion implantation. The single-frequency output power from the modulator is greater than 0.24 mW. An extinction ratio greater than 15 dB in a fiber-coupled power was obtained with a voltage change of 1.4 V for a compact modulator with an effective length less than 30 μm. Optical feedback from the modulator could be avoided in the lateral integration scheme.
- 2013-12-25
著者
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Shimada Toshikazu
Photonics Integration System Research Center Precision And Intelligence Laboratory Tokyo Institute O
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Koyama Fumio
Photonics Integration System Research Center P&i Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Semiconductor and MEMS Processing Center, Technical Department, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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