Gas Cluster Ion Beam Etching under Acetic Acid Vapor for Etch-Resistant Material
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概要
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Gas cluster ion beam (GCIB) etching of etch-resistant materials under acetic acid vapor was studied for development of new manufacturing process of future nonvolatile memory. Etching depths of various etch-resistant materials (Pt, Ru, Ta, CoFe) with acetic acid vapor during O<inf>2</inf>-GCIB irradiations were 1.8--10.7 times higher than those without acetic acid. Also, etching depths of Ru, Ta, CoFe by Ar-GCIB with acetic acid vapor were 2.2--16.1 times higher than those without acetic acid. Even after etching of Pt, smoothing of Pt was realized using O<inf>2</inf>-GCIB under acetic acid. From XPS and angular distribution of sputtered Pt, it was shown that PtO<inf>x</inf>layer was formed on Pt after O<inf>2</inf>-GCIB irradiation. PtO<inf>x</inf>reacted with acetic acid by GCIB bombardments; as a result, increase of etching depth was observed.
- 2013-05-25
著者
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Yamaguchi Akira
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Yamada Isao
Graduate School of Engineering, University of Hyogo, 2167 Syosya, Himeji, Hyogo 671-2201, Japan
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Toyoda Noriaki
Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Toyoda Noriaki
Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Hara Ken-ichi
Tokyo Electron, Technology Development Center, Tsukuba, Ibaraki 305-0841, Japan
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Hinoura Ryo
Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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