Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

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概要

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• This article addresses low defect densities in hydrogenated amorphous silicon, a-Si<inf>1-x</inf>:H<inf>x</inf>with approximately 10 at. % bonded H, x\sim 0.1. Based low defect densities at mid-gap, {\sim}0.5 to 1\times 10^{16} cm^-3, a-Si:H thin films have been integrated into photovoltaic (PV) devices and thin film transistors (TFT's). Amorphous Si (a-Si) thin films with no detectable bonded-H have been used as precursors for polycrystalline gate electrodes in microelectronic applications. PV and TFT alloys have been deposited by glow discharge (GD), remote plasma-enhanced chemical vapor deposition (RPECVD), and reactive magnetron sputtering (RMS) with different bonded-H content determined by deposition precursors and substrate temperatures. Two conditions are required for the lowest Si dangling bond densities: (i) a monohydride, Si--H, concentration of {\sim}10 at. % H, and (ii) deposition, and/or a post-deposition annealing at 240 to 300 °C.

• 2013-04-25

著者

• Parsons Greg

  North Carolina State University, Raleigh, NC 27695-8202, U.S.A.

• Lucovsky Gerry

  North Carolina State University, Raleigh, NC 27695-8202, U.S.A.

• Zeller Daniel

  North Carolina State University, Raleigh, NC 27695-8202, U.S.A.

• Kim Jinwoo

  North Carolina State University, Raleigh, NC 27695-8202, U.S.A.

関連論文

• Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon
• Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon (Special Issue : Solid State Devices and Materials)

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