A Numerical Device Model and Approach to Degradation Mechanisms in Organic Light Emitting Diodes
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概要
- 論文の詳細を見る
We propose a novel Schottky and impedance spectroscopy (IS) numerical model to evaluate carrier injection and transport behavior of organic semiconductor materials. Using temperature-dependent current--voltage (I--V) and IS measurements of hole-only (HOD) and electron-only (EOD) devices and phosphorescent blue organic light emitting diodes (OLEDs), we have obtained values for the Richardson factor, the barrier height, trap density, density of states (DOS), and carrier mobility of organic materials and interfaces as device parameters. Therefore, we approach to degradation mechanism of the emitting zone inside of the OLEDs.
- 2013-04-25
著者
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Weber Karl
Materials Science and Engineering, CSIRO, Bayview Avenue, Clayton, Victoria 3168, Australia
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Ueno Kazunori
Materials Science and Engineering, CSIRO, Bayview Avenue, Clayton, Victoria 3168, Australia
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Hirai Tadahiko
Materials Science and Engineering, CSIRO, Bayview Avenue, Clayton, Victoria 3168, Australia
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Bown Mark
Materials Science and Engineering, CSIRO, Bayview Avenue, Clayton, Victoria 3168, Australia
関連論文
- A Numerical Device Model and Approach to Degradation Mechanisms in Organic Light Emitting Diodes
- A Numerical Device Model and Approach to Degradation Mechanisms in Organic Light Emitting Diodes (Special Issue : Solid State Devices and Materials)