Optimization of Dislocation Edge Stress Effects for Si N-Type Metal--Oxide--Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る

• The comprehensive investigation on the effect of dislocation edge stress for Si N-type metal--oxide--semiconductor field-effect transistors (N-MOSFETs) is presented in this work by the experimental measurement and proposed simulation model. The accurate stress measurement in Si oxide dimension (OD) region with and without dislocation edge stress treatment is extracted by atomic force microscope (AFM)--Raman technique with the nanometer level space resolution. Less compressive stress in Si OD region on the real transistor with dislocation edge stress treatment is observed successfully and has its corresponding higher electron carrier mobility, agreed with the strained Si theory. Main reasons for the less compressive stress in the device with dislocation edge stress treatment are the more stress relaxation of the shallow trench insulator (STI) intrinsic compressive stress in modern CMOS process and one layer Si atom missing near the source and drain region along the dislocation line. The measured stress from AFM--Raman spectra experimentally, the simulated stress from proposed finite element method, and its corresponding electrical characteristics agrees well with each other in this work. After the comprehensive understanding and calibrated model for the dislocation edge stress, the relationship between channel stress and dislocation edge shapes, including the angle and length of dislocation lines, is simulated and investigated clearly. It can be found that longer dislocation line and smaller dislocation angle can relax the intrinsic STI compressive stress more and should have the better electron carrier mobility and device performance for N-MOSFETs.

• 2013-04-25

著者

• YANG CHEN

  Department of Biochemical Engineering & Science, Kyushu Institute of Technology

• Kao Si-Cha

  Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C.

• Yu Ming-Yuan

  Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C.

• Liao Ming-Han

  Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C.

• Chang Li-Chen

  Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C.

• Liu Gan-Han

  Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C.

• Chen Ci-Hua

  Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C.

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