Phenylene--Thiophene Oligomer Derivatives for Thin-Film Transistors: Structure and Semiconductor Performances
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概要
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Two phenylene--thiophene oligomer derivatives, 2,8-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene (28HPTDBT) and 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene (37HPTDBT), were used as active materials in thin-film organic field-effect transistors (OFETs). Although the two molecules have similar structures, they exhibited obvious differences in photophysical, crystal, \pi-stacking, and electrical properties. 28HPTDBT is an amorphous material and hence showed no semiconductor characteristics in its thin-film OFETs, while 37HPTDBT exhibited high crystallinity and strong \pi-stacking in the solid state, thus resulting in high charge carrier mobilities. The effects of gate insulators and annealing treatment on transistor performances were also investigated. Thin-film OFETs based on 37HPTDBT with an octadecanyltrichlorosilane (OTS)-treated SiO<inf>2</inf>gate insulator exhibited excellent field-effect performances with a maximum mobility of 0.3 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>and a high I_{\text{on}}/I_{\text{off}} current ratio of 1.5\times 10^{5}. Although annealing treatment improved the crystallinity of the thin films, the appearance of voids (cracks) resulted in a decrease in the charge carrier mobilities in the OFETs.
- 2013-03-25
著者
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Nishioka Yasushiro
College Of Science And Technology Nihon University
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Yanagi Yuichiro
College of Science and Technology, Nihon University, Funabashi, Chiba 274-8501, Japan
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Zhao Gaoyang
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, Shaanxi 710048, China
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Duan Zongfan
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, Shaanxi 710048, China
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Ohuchi Hirokuni
College of Science and Technology, Nihon University, Funabashi, Chiba 274-8501, Japan
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Takayanagi Yutaro
College of Science and Technology, Nihon University, Funabashi, Chiba 274-8501, Japan
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Duan Zongfan
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, Shaanxi 710048, China
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