Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

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概要

• 論文の詳細を見る

• Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to {\sim}5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a {\sim}100\times 200 nm²area.

• 2013-03-25

著者

• Xu Peng

  Department Of Chemistry University Of Science And Technology Of China

• Wheeler Virginia

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

• Eddy Jr.

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

• Myers-Ward Rachael

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

• Barber Steven

  Department of Physics, University of Arkansas, Fayetteville, AR 72701, U.S.A.

• Gaskill D.

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

• Nyakiti Luke

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

• Ackerman Matthew

  Department of Physics, University of Arkansas, Fayetteville, AR 72701, U.S.A.

• Qi Dejun

  Department of Physics, University of Arkansas, Fayetteville, AR 72701, U.S.A.

• Schoelz James

  Department of Physics, University of Arkansas, Fayetteville, AR 72701, U.S.A.

• Thibado Paul

  Department of Physics, University of Arkansas, Fayetteville, AR 72701, U.S.A.

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• Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

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