Passively Q-Switched Intracavity BaTeMo
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概要
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A diode-end-pumped passively Q-switched intracavity Raman laser at 1179 nm is obtained with the BaTeMo<inf>2</inf>O<inf>9</inf>nonlinear Raman crystal for the first time. With an incident pump power of 12.3 W, the average output power of 1179 nm is obtained to be 0.41 W. The pulse repetition rate is measured to be 24 kHz and the pulse width is 5.2 ns. The beam quality factors (M^{2}) in the horizontal and vertical directions are determined to be 1.5\pm 0.1 and 2.0\pm 0.1, respectively.
- 2013-05-25
著者
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Li Ping
School Of Bioscience And Bioengineering South China University Of Technology Guangzhou Higher Education Mega Center
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SHEN Hongbin
School of Information Science and Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University
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ZHANG Xingyu
School of Information Science and Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University
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GAO Liang
School of Information Science and Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University
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BAI Fen
School of Information Science & Engineering and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University
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TAO Xutang
State Key Laboratory of Crystal Material, Shandong University
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LIU Zhaojun
School of Information Science & Engineering and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University
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CHEN Xiaohan
School of Information Science and Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University
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WANG Qingpu
School of Information Science & Engineering and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University
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LAN Weixia
School of Information Science and Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University
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Li Ping
School of Information Science & Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100, P. R. China
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Gao Zeliang
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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Zhang Junjie
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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Fang Jiaxiong
Advanced Research Center for Optics, Shandong University, Jinan 250100, P. R. China
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Gao Zeliang
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Zhang Junjie
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Zhang Xingyu
School of Information Science & Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100, P. R. China
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Liu Zhaojun
School of Information Science & Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100, P. R. China
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Bai Fen
School of Information Science & Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100, P. R. China
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