Improvements of Bilayer Ambipolar Organic Field-Effect Transistors Based on Pentacene and N,N\aku '-Ditridecylperylene-3,4,9,10-tetracarboxylic Di-imide by Changing Growth Rate Method
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概要
- 論文の詳細を見る
The changing growth rate method is adopted for the first time to improve the performance of ambipolar organic field-effect transistors (OFETs). Pentacene and N,N\aku '-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) are chosen as p-type and n-type organic semiconductors, respectively. By modifying the dielectric surface with polystyrene, balanced carrier mobilities as high as 0.41 and 0.40 cm2\cdotV-1\cdots-1 for hole and electron, respectively, are achieved through such method, which are the highest values for air-stable ambipolar OFETs. Meanwhile, the devices show negligible hysteresis and air stability for more than one week.
- 2012-09-25
著者
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Liu Xingyuan
State Key Laboratory Of Luminescence And Applications Changchun Institute Of Optics Fine Mechanics And Physics Chinese Academy Of Sciences
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HU Yongsheng
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
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LIN Jie
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
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Lin Jie
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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ZHANG Nan
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
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QIN Li
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
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Liu Xingyuan
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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- Improvements of Bilayer Ambipolar Organic Field-Effect Transistors Based on Pentacene and N,N\aku '-Ditridecylperylene-3,4,9,10-tetracarboxylic Di-imide by Changing Growth Rate Method
- Improvements of Bilayer Ambipolar Organic Field-Effect Transistors Based on Pentacene and N,N'-Ditridecylperylene-3,4,9,10-tetracarboxylic Di-imide by Changing Growth Rate Method
- Low-Voltage, High-Mobility Air-Stable Ambipolar Organic Field-Effect Transistors with a Voltage-Dependent Off-Current State and Modest Operational Stability
- Low-Voltage, High-Mobility Air-Stable Ambipolar Organic Field-Effect Transistors with a Voltage-Dependent Off-Current State and Modest Operational Stability