Deposition of SiO2 Thin Films on Polycarbonate by Atmospheric-Pressure Plasma

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Low-temperature, atmospheric-pressure SiO2 thin film deposition was achieved using dielectric barrier discharge plasma with a high-voltage pulse. Experiments were conducted using diethoxydimethylsilane as the silicon source at different oxygen concentrations, gas flow rates, and deposition times. Hard, transparent thin-coated films were obtained at high oxygen concentrations because of the capture of carbon by oxygen during deposition. A deposition rate of 60 nm/min was achieved with the pulsed plasma at a duty ratio of 4%, gap length of 1 mm, and peak voltage of 13 kV without cooling or heating of the polycarbonate substrate. A usable SiO2 hard-coat film with a thickness of 1.6 μm and an indentation hardness of 1480 N/mm2 was obtained after a deposition time of 30 min in oxygen.
2012-01-25