Temperature Dependence of Oxygen Diffusion and Crystal Structure for Thermally Oxidized Titanium Thin Films
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概要
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The thermal oxidation of titanium (Ti) thin films has been investigated, focusing on the depth profile of oxygen and crystallinity. Ti thin films were epitaxially grown on Si(001) substrates, even at room temperature, by electron bombardment. The thermal oxidations of the Ti films were carried out in an oxygen environment of 0.1 Torr at temperatures ranging from 200 to 1000 °C for a fixed oxidation time of 30 min. It was found that the Ti film was insufficiently oxidized at a temperature lower than 600 °C, and crystalline TiO and Ti2O3 were formed. Above 600 °C, the Ti film was sufficiently oxidized and its crystal structure became completely rutile-type TiO2. No anatase crystal structure appeared at any oxidation temperature. A thermal diffusion model of oxygen in a Ti film is presented for each oxidation temperature. The volume expansion of the Ti film due to oxidation was also examined and obtained to be 1.77.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2012-01-25
著者
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Horio Yoshimi
Department Of Applied Electronics Daido Institute Of Technology
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Yamamoto Yoshitaka
Department Of Electrical Engineering Osaka Institute Of Technology
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Morimoto Yuuki
Department of Electrical and Electronic Engineering, Daido University, Nagoya 457-8530, Japan
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Hara Yuichiro
Department of Electrical and Electronic Engineering, Daido University, Nagoya 457-8530, Japan
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Naitoh Tatsuya
Department of Electrical and Electronic Engineering, Daido University, Nagoya 457-8530, Japan
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Yamamoto Yoshitaka
Department of Electrical and Electronic Engineering, Daido University, Nagoya 457-8530, Japan
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Horio Yoshimi
Department of Electrical and Electronic Engineering, Daido University, Nagoya 457-8530, Japan
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