Polarization Dependences of Two-Photon Absorption in Si and GaAs Photodiodes at a Wavelength of 1.55 μm

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概要

• 論文の詳細を見る

• Photocurrents induced by two-photon absorption (TPA) at a wavelength of 1.55 μm in GaAs and Si photodiodes (PDs) were measured and compared. The photocurrent generated by a GaAs PD depends strongly on the linear polarization direction, which is consistent with the anisotropic nature of TPA in GaAs. In contrast, the photocurrent of a Si PD has a negligible dependence on the polarization direction, indicating that TPA is isotropic in this PD at a wavelength of 1.55 μm. The photocurrents generated by GaAs and Si PDs by elliptically polarized light are consistent with analysis based on the third-order nonlinear susceptibility tensor.

• 2011-12-25

著者

• KAGAWA Toshiaki

  Shonan Institute of Technology

• Kagawa Toshiaki

  Shonan Institute of Technology, Fujisawa, Kanagawa 251-8511, Japan

関連論文

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• Design of Deep Guard Ring for Geiger Mode Operation Avalanche Photodiode(Lasers, Quantum Electronics)
• Polarization Dependences of Two-Photon Absorption in Si and GaAs Photodiodes at a Wavelength of 1.55 μm
• Measurement of Constant and Time-Dependent Polarizations Using Two-Photon Absorption of Si Avalanche Photodiode

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