Evidence of Kinetically Stable Glassy Phase Formation in Ultrathin NdNiO3 Films
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概要
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We are reporting the time and temperature dependence of the electrical resistivity exhibited by ultrathin NdNiO3 films. Films with thicknesses ranging from 0.6 to 120 nm were grown on single crystal LaAlO3 substrate (001) using a pulsed laser deposition technique. Temperature dependence of the electrical resistivity indicated dissipation of strain effects for thicknesses ranging from 0.6 to 6 nm, below the critical thickness for defect formation, approximately 12 nm. Strain dissipation prior to defect formation occurred due to a decrease in the Ni--O--Ni bond angle with increasing film thickness resulting from an increased freedom of movement in the NiO6 octahedra. Subsequent defect formation and clustering in the 60 and 120 nm samples resulted in a domination of the material properties by defects rather than strain effects. Our study showed that below the metal--insulator transition temperature, electrical resistivity of the films was very strongly time dependent. A plausible mechanism of kinetically stable glassy phase formation has been proposed which not only explains the time dependence of the electrical resistivity data but also accounts for its anomalous temperature dependence at low temperatures.
- 2012-11-25
著者
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Prestgard Megan
Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, 122 S. Central Campus Drive, Salt Lake City, UT 84112, U.S.A.
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Tiwari Ashutosh
Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, 122 S. Central Campus Drive, Salt Lake City, UT 84112, U.S.A.