Tip-Induced Deformation of Graphene on SiO2 Assessed by Capacitance Measurement
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概要
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Tip-induced deformation of graphene on a SiO2 substrate was probed through a combination of scanning capacitance microscopy (SCM) and dynamic force microscopy (DFM). Spectroscopic analysis revealed that the resonant frequency shift (\Delta f) of the probe tip oscillation and the modulated capacitance (\Delta C) simultaneously measured on graphene depend on the externally applied bias voltage while keeping the tip--sample distance constant. This finding is interpreted as a result of a local displacement of the graphene surface caused by the electrostatic force between the probe tip and graphene. The approach curve of the SCM tip toward graphene can be used to calibrate the observed \Delta C spectra, quantitatively yielding an average deformation of approximately 0.31 nm in trilayer graphene and 0.21 nm in single-layer graphene.
- 2012-11-25
著者
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Naitou Yuichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Naitou Yuichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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