Conduction Band Model of [110]/(001) Uniaxially Strained Si
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概要
- 論文の詳細を見る
The conduction band structure of [110]/(001) uniaxially strained Si changes owing to the coupling effect between \Delta_{1} and \Delta_{2'} conduction subbands. Consequently, its corresponding physical property will be changed. Because of the lack of reported papers about this change, we establish the analytic E--k relationship, considering the coupling effects between conduction subbands, near the extreme point of the energy valley in [110]/(001) uniaxially strained Si within the framework of the k\cdot p perturbation theory. Then, the parameters of the conduction band of [110]/(001) uniaxially strained Si, including band degeneracy, energy level, splitting energy, and effective mass, as a function of the magnitude of stress were obtained. Our analytic models and quantized results will provide significant theoretical references for the design of a uniaxially strained Si metal oxide semiconductor field effect transistor (MOSFET).
- 2012-10-25
著者
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Hui-Yong Hu
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Jian-Jun Song
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Chao Yang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Guan-Yu Wang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Chun-Yu Zhou
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Bing Wang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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He-Ming Zhang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Chao Yang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Chun-Yu Zhou
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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He-Ming Zhang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Bing Wang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Jian-Jun Song
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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Guan-Yu Wang
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China