Capacitive Imaging of Graphene Flakes on SiO2 Substrate

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概要

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• We used scanning capacitance microscopy (SCM) for the local electrical imaging of graphene flakes on a SiO2 substrate. As a result of analyzing the dependence of the SCM measurements on the area of thin graphite nanoislands together with the observed difference in contrast of SCM images related to the graphene layer's thickness, we have concluded that the SCM measurements can selectively image high-conductivity few-layer graphene (FLG) flakes on an insulating substrate without having to fabricate external electrical contacts on the graphene. Our technique is a simple way to explore the conductive properties of low-dimensional systems on an insulating substrate with nanoscale resolution.

• 2011-06-25

著者

• Naitou Yuichi

  Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Ogiso Hisato

  Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan

関連論文

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• Tip-to-Sample Distance Dependence of $dC/dZ$ Imaging in Thin Dielectric Film Measurement
• Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2 Films Evaluated by Scanning Capacitance Microscopy
• Capacitive Imaging of Graphene Flakes on SiO2 Substrate
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