Growth of $\gamma$-In2Se3 Thin Films by Electrostatic Spray Pyrolysis Deposition

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概要

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• $\gamma$-In2Se3 thin films were grown by the electrostatic spray pyrolysis deposition growth technique. We investigated the dependence of the crystalline quality and optical properties of the grown films on the growth conditions, such as growth temperatures and the molar ratios of source material Se/In in the precursor solution. The films which were highly aligned to the $c$-axis were grown at low growth temperature of 250 °C on glass substrates. The optical band gap energy was about 1.94 eV and was independent of the growth temperatures and the molar ratios Se/In in the precursor solution.

• 2011-05-25

著者

• Onojima Norio

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu 400-8511, Japan

• Kato Takamasa

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu 400-8511, Japan

• Hiramatsu Toshitaka

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu 400-8511, Japan

関連論文

• Fabrication of 6,13-Bis(triisopropylsilylethynyl) Pentacene Films by Electrostatic Spray Deposition for Bottom-Contact Organic Field-Effect Transistors
• Growth of $\gamma$-In2Se3 Thin Films by Electrostatic Spray Pyrolysis Deposition
• Fabrication of 6,13-Bis(triisopropylsilylethynyl) Pentacene Films by Electrostatic Spray Deposition for Bottom-Contact Organic Field-Effect Transistors

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