Evaluation of a New Advanced Low-$k$ Material

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New advanced low dielectric constant films (spin-on 2.0) with $k = 2.0$ were prepared by using a self-assembling technology and deposited by the spin-on method. The open porosity of the films was equal to 40% and they exhibit good mechanical properties (Young's modulus for the pristine sample, thermally cured, is 4.77 GPa and hardness is 0.54 GPa). The principal advantage of these films is the absence of sp2 carbon that is typically formed in porogen based plasma enhanced chemical vapor deposition (PECVD) films and causes high leakage current. The change of the film's properties after UV assisted thermal curing at $T = 430$ °C with lamps having different wavelengths (narrowband with $\lambda = 172$ nm and broadband lamp with $\lambda > 200$ nm) was studied. Electrical measurements show a small increase of the $k$-value, however FTIR spectroscopy shows no bulk and surface hydrophilization after the curing. Observed decreases in thickness and porosity indicate densification of the matrix.
2011-05-25