High-Throughput Characterization Method for Crystallization Temperature of Integrated Thin Film Amorphous Alloys Using Thermography

概要

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We introduce the high-throughput characterization of the crystallization temperature $T_{\text{x}}$ of thin film amorphous alloys integrated into a thin film library. This characterization is achieved using thermography. A new thin film library is designed and fabricated using photolithography and a lift-off process. Using a homogeneous composition thin film library, the validity of the proposed method is confirmed. The crystallization of all samples can be detected simultaneously, and the measured $T_{\text{x}}$ distribution is about 8 K. Three compositionally distributed thin film libraries of the Pd--Cu--Si alloy system were then fabricated using combinatorial arc plasma deposition (CAPD), and the $T_{\text{x}}$ values of the samples on the three libraries were measured. In the three libraries, $T_{\text{x}}$ for 285 amorphous samples could be measured, and there was an obvious distribution in $T_{\text{x}}$ depending on the sample composition. At two selected compositions, the measured $T_{\text{x}}$ values agree with differential scanning calorimetry (DSC) results within 8 K. In terms of throughput, the proposed method achieves a measurement time reduction of 66% compared with a conventional method using DSC. Consequently, the proposed method enables the high-throughput combinatorial characterization of the $T_{\text{x}}$ of thin film amorphous alloys.
2011-05-25