Effect of Pressure on the Giant Magnetoresistance in Co/Cu Magnetic Multilayers

概要

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The effect of pressure and magnetic field on the temperature dependent electrical resistivity <TEX>$\rho(T)$</TEX> of the [Co(1.02 nm)/Cu(<TEX>$t_{\text{Cu}}$</TEX> nm)]25 magnetic multilayers (MML) with <TEX>$t_{\text{Cu}}=0.76$</TEX> [ferromagnetic (F)] and 1.05 [antiferromagnetic (AF)] has been investigated at low temperature. MR ratio <TEX>$\Delta\rho/\rho_{\text{s}}$</TEX> for <TEX>$t_{\text{Cu}}=1.05$</TEX> and 0.76 decreases with increasing pressure. The pressure dependent <TEX>$\Delta\rho/\rho_{\text{s}}$</TEX> for <TEX>$t_{\text{Cu}}=1.05$</TEX> is more significant than that for 0.76. <TEX>$\rho(T)$</TEX> at <TEX>$H=0$</TEX> and above saturation field <TEX>$H_{\text{s}}$</TEX> (<TEX>$H=2$</TEX> T) for Co/Cu MMLs is found to show <TEX>$T^{2}$</TEX>−dependence in the relatively wide temperature range, <TEX>$4.2\leq T\leq 20$</TEX> K, at low temperature. The coefficient of <TEX>$T^{2}$</TEX> term (<TEX>$=A$</TEX>) for F−state is larger than that for AF−state at ambient pressure. The change of <TEX>$A$</TEX> for <TEX>$t_{\text{Cu}}=1.05$</TEX> at <TEX>$H=0$</TEX> is smaller than that at <TEX>$H=2$</TEX> T. These results are discussed on the basis of the electron scattering at interfaces due to magnons or spin−wave.
2006-02-15