Semiconductor--Metal Transition and Band-Gap Tuning in Quasi-Free-Standing Epitaxial Bilayer Graphene on SiC
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概要
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We have performed angle-resolved photoemission spectroscopy of quasi-free-standing bilayer graphene epitaxially grown on silicon carbide. Prepared bilayer graphene shows a semiconducting behavior with a finite energy gap at the Fermi level in contrast to the theoretical prediction. We found that potassium-deposition on the sample leads to the semiconductor-to-metal transition together with the enhancement of the gap energy between the \pi and \pi^{*} bands. The observed controllable tuning of the Fermi-level position and the gap energy provides an important step toward the band-gap engineering with bilayer graphene.
- 2011-02-15
著者
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Sato Takafumi
Department Of Applied Chemistry Utsunomiya University
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Sato Takafumi
Department of Physics, Tohoku University, Sendai 980-8578, Japan
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Takahashi Takashi
WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Sugawara Katsuaki
WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Kanetani Kohei
Department of Physics, Tohoku University, Sendai 980-8578, Japan
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