Formation of High-Density Pt Nanodots on SiO<sub>2</sub> Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory
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We formed nanometer-scale Pt dots on SiO<sub>2</sub> by thermal plasma jet (TPJ) irradiation and demonstrated the feasibility of TPJ millisecond annealing for controlling the areal density of the dots. 2--10-nm-thick Pt/quartz was exposed to an Ar plasma jet at peak temperatures of 455--695 °C for a duration of 1--2 ms. When the Pt/quartz was annealed by TPJ irradiation without any extra heating, the Pt nanodot density was controlled in the range of $7.8 \times 10^{10}$ to $2.0 \times 10^{11}$ cm-2 by changing the annealing temperature and the number of irradiations. These results imply that ultra-rapid annealing using a TPJ plays an important role in enhancing the surface migration of Pt atoms in order to reduce the interface energy of Pt/quartz.
- 2011-08-25
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